发明名称 |
Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor |
摘要 |
A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.
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申请公布号 |
US2003082412(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20020181827 |
申请日期 |
2002.07.22 |
申请人 |
FUKUDA KAZUHIRO;KONDO YOSHIKAZU;MURAKAMI TAKASHI;IWAMARU SHUNICHI;MURAMATSU YUMI;TSUJI TOSHIO |
发明人 |
FUKUDA KAZUHIRO;KONDO YOSHIKAZU;MURAKAMI TAKASHI;IWAMARU SHUNICHI;MURAMATSU YUMI;TSUJI TOSHIO |
分类号 |
C23C4/18;C23C16/509;C23C16/54;G02B1/10;(IPC1-7):C23C16/00;B05D3/06;B32B9/00 |
主分类号 |
C23C4/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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