发明名称 Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
摘要 A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.
申请公布号 US2003082412(A1) 申请公布日期 2003.05.01
申请号 US20020181827 申请日期 2002.07.22
申请人 FUKUDA KAZUHIRO;KONDO YOSHIKAZU;MURAKAMI TAKASHI;IWAMARU SHUNICHI;MURAMATSU YUMI;TSUJI TOSHIO 发明人 FUKUDA KAZUHIRO;KONDO YOSHIKAZU;MURAKAMI TAKASHI;IWAMARU SHUNICHI;MURAMATSU YUMI;TSUJI TOSHIO
分类号 C23C4/18;C23C16/509;C23C16/54;G02B1/10;(IPC1-7):C23C16/00;B05D3/06;B32B9/00 主分类号 C23C4/18
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