发明名称 |
Polymers, resist compositions and patterning process |
摘要 |
A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.
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申请公布号 |
US2003082479(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20020178237 |
申请日期 |
2002.06.25 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;HARADA YUJI;KAWAI YOSHIO;SASAGO MASARU;ENDO MASAYUKI;KISHIMURA SHINJI;OOTANI MICHITAKA;MIYAZAWA SATORU;TSUTSUMI KENTARO;MAEDA KAZUHIKO |
分类号 |
G03F7/032;G03F7/00;G03F7/038;G03F7/039;(IPC1-7):G03F7/038;G03F7/40;G03F7/38;G03C1/492 |
主分类号 |
G03F7/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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