| 摘要 |
Photomask blanks are fabricated by forming half-tone film over quartz substrate and causing a half-tone phase shift film to contain impurity becoming a color center by implanting ion at a predetermined depth of the half-tone film by means of ion-implantation. Using the above photomask blanks, a desired pattern is formed within photosensitive resist by applying photosensitive resist over the half-tone film thereover, exposing the resist through use of a desired pattern, and then developing the resist. Through the above photosensitive resist as a mask, the half-tone film is etched to form a predetermined pattern within the half-tone film. The exposed photosensitive resist is removed to fabricate a photomask. |
