METHODS OF HYPERDOPING SEMICONDUCTOR MATERIALS AND HYPERDOPED SEMICONDUCTOR MATERIALS AND DEVICES

摘要

Methods are disclosed for producing highly doped semiconductor materials (313). Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without delirious side effects. Additionally, highly doped semiconductor materials (601) are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.