发明名称 |
GAS DELIVERY APPARATUS FOR ATOMIC LAYER DEPOSITION |
摘要 |
An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. |
申请公布号 |
WO03035927(A2) |
申请公布日期 |
2003.05.01 |
申请号 |
WO2002US34553 |
申请日期 |
2002.10.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHEN, LING;KU, VINCENT;WU, DIEN-YEH;CHUNG, HUA;OUYE, ALAN;NAKASHIMA, NORMAN;CHANG, MEI |
分类号 |
C23C16/44;C23C16/455;H01L21/205;H01L21/28;H01L21/285;H01L21/768 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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