| 摘要 |
<p>A microwave plasma substrate processing device, comprising a processing container forming a processing space for plasma processing, a substrate holding stand installed in the processing space and holding a processed substrate, an exhaust passage formed between the processing container and the substrate holding stand so as to surround the substrate holding stand, an exhaust system connected to the processing container and exhausting gas in the processing space through the exhaust passage, a processing gas feed system for leading the processing gas into the processing space, a microwave window installed so as to face the processed substrate on the holding stand, formed of dielectric material, extending substantially parallel with the processed substrate, and forming a part of the outer wall of the processing container, and a microwave antenna connected to the microwave window, wherein at least a part of the processing space is covered with an insulating layer.</p> |
