| 摘要 |
PURPOSE: A non-volatile semiconductor memory device having a cache function and a program, a read, and a copy-back method thereof are provided to support a program/read cache function by forming a page buffer having two sense and latch blocks. CONSTITUTION: A memory cell array(120) includes a plurality of cell strings. The cell strings are electrically connected with corresponding bit lines((BL0_E,BL0_O) to (BLn_E,BLn_O)). The bit lines((BL0_E,BL0_O) to (BLn_E,BLn_O)) are used as registers for storing temporarily data. The bit lines((BL0_E,BL0_O) to (BLn_E,BLn_O)) are electrically connected with a page buffer circuit(140). The page buffer circuit(140) is formed with a plurality of page buffers(PB0 to PBx). Each page buffer(PB0 to PBx) has a bit line selection and bias block(200), a precharge block(220), the first sense and latch block(240), and the second sense and latch block(260). An internal node(N1) is connected with a data bus through a column gate circuit(160).
|
