发明名称 |
Chemical mechanical polishing compositions for metal and associated materials and method of using same |
摘要 |
A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
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申请公布号 |
US2003079416(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20010932415 |
申请日期 |
2001.08.17 |
申请人 |
MA YING;WOJTCZAK WILLIAM;REGULSKI CARY;BAUM THOMAS H.;BERNHARD DAVID D.;VERMA DEEPAK |
发明人 |
MA YING;WOJTCZAK WILLIAM;REGULSKI CARY;BAUM THOMAS H.;BERNHARD DAVID D.;VERMA DEEPAK |
分类号 |
B24B37/04;C09G1/02;H01L21/321;(IPC1-7):C09K3/14 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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地址 |
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