| 摘要 |
<p>A nitride semiconductor laser element which is provided with high-output type resonator end surfaces and which has a resonator containing an active layer consisting of an In-containing nitride semiconductor between an n-type nitride semiconductor layer and a p-type semiconductor layer, wherein an end surface film, consisting of a single crystal AlxGa1-xN (0≤x≤1) that is formed at low temperatures not damaging the active layer consisting of the In-containing nitride semiconductor, is formed on at least an outgoing end surface out of the opposing resonator end surfaces of the laser element.</p> |
