发明名称 CIRCUIT HAVING MAKE LINK FUSE AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 PURPOSE: A circuit having a make link fuse and a semiconductor device using the same are provided to improve the reliability of an operation by cutting off the current flow through a make link fuse. CONSTITUTION: A node(n5) is in a state of high level and a PMOS transistor(P3) is turned off when a make link fuse(F3) is disconnected and a make link fuse(F4) is connected. At this time, a gate of the PMOS transistor(P3) is in the state of high level. The node(n5) is in the state of low level and the PMOS transistor(P3) is turned on when the make link fuse(F3) is connected and the make link fuse(F4) is disconnected. At this time, the gate of the PMOS transistor(P3) is in the state of low level. A floating phenomenon of the gate is prevented since the gate of the PMOS transistor(P3) is fixed to low level or the high level.
申请公布号 KR20030033666(A) 申请公布日期 2003.05.01
申请号 KR20010065748 申请日期 2001.10.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, WON SEOK;MUN, YEONG GUK;YOO, DONG YEOL
分类号 H01L21/82;G11C17/18;G11C29/00;(IPC1-7):G11C29/00 主分类号 H01L21/82
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