发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: A semiconductor integrated circuit is provided to be capable of obtaining excellent circuit characteristics without cross talk by removing the cross region between metal lines. CONSTITUTION: A semiconductor integrated circuit is provided with a differential amplifier(1) and a pair of emitter follower circuits(22,23) symmetrically located with respect to the center line of the differential amplifier, so that a cross region between metal lines(3) is capable of being removed for improving circuit characteristics. Preferably, a bipolar transistor is used as the emitter follower circuit. Preferably, the emitter follower circuit includes the first transistor having a base electrically connected with the collector of a differential transistor, and the second transistor for supplying current to the first transistor.
申请公布号 KR20030033998(A) 申请公布日期 2003.05.01
申请号 KR20020064884 申请日期 2002.10.23
申请人 SANYO ELECTRIC CO., LTD. 发明人 SHIINA MASAHIRO
分类号 H01L21/82;H01L27/00;H01L27/02;H01L29/00;H03F3/45;H03K19/20;(IPC1-7):H03F3/45 主分类号 H01L21/82
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