| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to enlarge the surface of a storage electrode without increasing the thickness or width of the storage electrode by forming concaves and convexes on a conductive layer. CONSTITUTION: A photoresist layer is formed on the upper portion of the first conductive layer(37), wherein the first conductive layer is connected with a semiconductor substrate(30). The photoresist layer is removed by exposing and developing. At this time, a plurality of scum(39) are formed on the upper portion of the first conductive layer(37). Then, concaves and convexes are formed on the upper surface of the first conductive layer(37) by removing the scum using a dry etching process. A core insulation layer is formed on the resultant structure. Preferably, the scum is removed by using plasma made of Ar and Cl2.
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