CONTACT PORTION OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND THIN FILM TRANSISTOR ARRAY PANEL FOR DISPLAY DEVICE INCLUDING THE CONTACT PORTION AND METHOD FOR MANUFACTURING THE SAME

摘要

In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate while proceeding in the horizontal direction. The gate line assembly has gate lines, gate electrodes, and gate pads. A gate insulating layer is formed on the substrate with the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A conductive layer is deposited onto the substrate, and patterned to thereby form a data line assembly. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer and an organic insulating layer are deposited onto the substrate. The organic insulating layer is expose to light, and developed to thereby form contact holes exposing the protective layer over the drain electrodes, the gate pads and the data pads. The protective layer is etched using the organic insulating layer as a mask to thereby expose the drain electrodes, the gate pads and the data pads. The organic insulating layer is contracted or re-flown through curing such that the undercut structure is removed at the contact area. The organic insulating layer suffers ashing before the curing step. An ITO or IZO-based layer is deposited onto the organic, insulating layer, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the drain electrodes, and the subsidiary gate and data pads are connected to the gate and the data pads.