| 摘要 |
PURPOSE: A memory cell is provided, in which a fuse memory cell is programmed by applying a voltage across the cell so that the cell is "blown" during programming and the binary state of fuse memory cells is detected as the resistance of the cell measured during a read process. CONSTITUTION: A memory cell hss a memory array(100) having dual tunnel junction memory cells(130). In the memory array(100), word lines(110) extend in horizontal rows, and bit lines(120) extend in vertical columns. The word lines(110) cross the bit lines(120) at memory cells(130). Each memory cell(130) stores a binary state of either "1" or "0.". The dual tunnel junction memory cells(130) are illustrated symbolically as two resistive elements. Each resistive element corresponds to a tunnel junction in a memory cell(130).
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