METHOD FOR FORMING METAL INTERCONNECTION

摘要

PURPOSE: A method for forming metal interconnection is provided to increase the grain density of an aluminum layer and to prevent metal residuals between metal lines by forming a wetting layer made of a titanium nitride layer and a titanium layer. CONSTITUTION: After forming an insulation layer(202) on a semiconductor substrate(200), a contact hole(204) is formed by patterning the insulation layer(202) in order to expose a predetermined region of the semiconductor substrate(200). A barrier metal layer is deposited on the entire surface of the resultant structure. A wetting layer is formed on the barrier metal layer by sequentially depositing a titanium nitride layer(212) and a titanium layer(214). After forming an aluminum layer(216) on the titanium layer(214), the aluminum layer(216) is flowed by a heat treatment. At this time, the grain density of the aluminum layer(216) is increased by the titanium layer(214), thereby preventing metal residuals due to the photolithography for patterning the metal interconnection.