Integrated semiconductor arrangement comprises a semiconductor material, component structure arranged on the semiconductor material, and a spacer element having a main part arranged along the component structure

摘要

Integrated semiconductor arrangement (8) comprises a semiconductor material (10); a component structure (14) arranged on the semiconductor material; and a spacer element (50) having a main part (52) arranged along the component structure and which is not penetrated by ions during implantation of the semiconductor material. A foot part (40) formed on the spacer element on the side facing away from the component structure is penetrated by ions during implantation and influences the doping. Preferred Features: The main part of the spacer element has a planar side surface (30) which lies almost parallel to a side surface of the component structure. The foot part has a side surface (58) lying next to the planar surface and across the side surface of the component structure.