Semiconductor junction field effect transistor structure controlling and switching current flow

摘要

The junction field effect transistor (JFET) structure has a first semiconductor region (2) of first conductivity, within which extends a first current path (iP1) between an anode (60) and first cathode electrode (50). The first current path extends through a first channel region (22), within which the current can be affected by depletion zone(s) (23,24).A second current path (iP2) extends between anode and second cathode electrode (51) within the first semiconductor region, past the first channel region. Independent claim is included for a high operational voltage switch.