| 发明名称 |
Blågrönlaserdiod |
| 摘要 |
A p-type ohmic contact layer (26) on a p-type II-VI semiconductor body is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least 1 x 10<1><7> cm<-><3>, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers. <IMAGE> |
| 申请公布号 |
FI110971(B) |
申请公布日期 |
2003.04.30 |
| 申请号 |
FI19930005022 |
申请日期 |
1993.11.12 |
| 申请人 |
MINNESOTA MINING AND MANUFACTURING COMPANY, |
发明人 |
HAASE,MICHAEL A.;CHENG,HWA;DEPUYDT,JAMES M.;QIU,JUN |
| 分类号 |
H01L21/363;H01L21/28;H01L29/43;H01L33/00;H01L33/14;H01L33/28;H01L33/38;H01L33/40;H01S5/00;H01S5/042;H01S5/22;H01S5/223;H01S5/30;H01S5/32;H01S5/327;H01S5/34;H01S5/347;(IPC1-7):H01S3/19;H01L21/443 |
主分类号 |
H01L21/363 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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