发明名称 |
Process flow for capacitance enhancement in a DRAM trench |
摘要 |
Methods forming a trench region of a trench capacitor structure having increase surface area are provided. One method includes the steps of forming a discontinuous polysilicon layer on exposed walls of a lower trench region, the discontinuous polysilicon layer having gaps therein which expose portions of said substrate; oxidizing the lower trench region such that the exposed portions of said substrate provided by the gaps in the discontinuous polysilicon layer are oxidized into oxide material which forms a smooth and wavy layer with the discontinuous polysilicon layer; and etching said oxide material so as to form smooth hemispherical grooves on the walls of the trench region.
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申请公布号 |
US6555430(B1) |
申请公布日期 |
2003.04.29 |
申请号 |
US20000723420 |
申请日期 |
2000.11.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHUDZIK MICHAEL P.;FALTERMEIER JOHNATHAN;JAMMY RAJARAO;KUDELKA STEPHAN;MCSTAY IRENE;SETTLEMYER, JR. KENNETH T.;TEWS HELMUT HORST |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/824;H01L21/823;H01L21/20;H01L21/320;H01L21/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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