| 摘要 |
Methods are provided for making stencil masks from a mask substrate preferably having sequential layers of a backside hardmask, a mask substrate, a stencil pattern forming layer and preferably a frontside hardmask layer. In one method a backside protective layer is formed after a backside etch and substrate window etch to protect the stencil pattern forming layer during the stencil pattern forming layer etching process. In another method of the invention, a frontside protective layer is provided over the etched stencil pattern forming layer surface before the substrate layer etch to form a mask window. In both methods enhanced control of critical dimensions of the mask and profile control are achieved since are backside cooling of the substrate during making of the mask can be used during the mask fabrication process.
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