Semiconductor device for providing a noise shield

摘要

A first guard ring formed by high concentration ion diffusion is established around the transistor formation region of the semiconductor substrate. A second guard ring is established around the first guard ring with a prescribed gap therebetween. A metal film is formed opposing to each guard ring with an insulating film interposed therebetween; these metal films are connected to the opposing guard rings by interlayer wires. The metal films are each connected to external terminals providing a standard potential by individual metal wires from their respective electrodes.