Semiconductor device with multi-layer interconnection

摘要

A semiconductor device with a polycide interconnection including a refractory metal silicide film improved in adherence with an interlayer insulation film, and a method of fabricating such a semiconductor device are provided. The local impurity concentration of a tungsten silicide film in the proximity of the interface between an interlayer oxide film and the tungsten silicide film is set to 5x1019 atms/cm3-2x1022 atms/cm3.