| 发明名称 |
Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes |
| 摘要 |
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
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| 申请公布号 |
US6555890(B2) |
申请公布日期 |
2003.04.29 |
| 申请号 |
US20010863836 |
申请日期 |
2001.05.23 |
| 申请人 |
SENSORS UNLIMITED, INC. |
发明人 |
DRIES J. CHRISTOPHER;LANGE MICHAEL |
| 分类号 |
H01L31/02;H01L31/0304;H01L31/105;H01L31/107;H01L31/18;(IPC1-7):H01L31/075 |
主分类号 |
H01L31/02 |
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