发明名称 |
Non-volatile static memory cell |
摘要 |
A non-volatile SRAM cell including (i) a nonvolatile memory element, (ii) a volatile memory element coupled to the nonvolatile memory element and (iii) a gate circuit coupled to the nonvolatile memory element. The gate circuit is configured to transfer data to and from a first input/output line into the volatile memory element.
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申请公布号 |
US6556487(B1) |
申请公布日期 |
2003.04.29 |
申请号 |
US20010871172 |
申请日期 |
2001.05.31 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
RATNAKUMAR NIRMAL;PHELAN CATHAL G.;MURRAY KENELM G. D. |
分类号 |
G11C14/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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