发明名称 Non-volatile static memory cell
摘要 A non-volatile SRAM cell including (i) a nonvolatile memory element, (ii) a volatile memory element coupled to the nonvolatile memory element and (iii) a gate circuit coupled to the nonvolatile memory element. The gate circuit is configured to transfer data to and from a first input/output line into the volatile memory element.
申请公布号 US6556487(B1) 申请公布日期 2003.04.29
申请号 US20010871172 申请日期 2001.05.31
申请人 CYPRESS SEMICONDUCTOR CORP. 发明人 RATNAKUMAR NIRMAL;PHELAN CATHAL G.;MURRAY KENELM G. D.
分类号 G11C14/00;(IPC1-7):G11C7/00 主分类号 G11C14/00
代理机构 代理人
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