发明名称 Ferroelectric capacitor and method for fabricating the same
摘要 A ferroelectric capacitor with a multilayer ferroelectric film to prevent degradation of its ferromagnetic characteristics, wherein the ferroelectric film is made of a lower layer of PZT or PLZT formed on a lower electrode and an upper, titanium rich, layer of PZT, PLZT, or PbTiO3, an upper electrode formed on the upper layer of the ferroelectric film and a protective layer formed to cover the ferroelectric capacitor.
申请公布号 US6555428(B2) 申请公布日期 2003.04.29
申请号 US20010001829 申请日期 2001.12.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG DONG-JIN
分类号 H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/02
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