发明名称 |
Fully nickel silicided metal gate with shallow junction formed |
摘要 |
Semiconductor devices having fully metal silicided gate electrodes, and methods for making the same, are disclosed. The devices have shallow S/D extensions with depths of less than about 500 Å. The methods for making the subject semiconductor devices employ diffusion of dopant from metal suicides to form shallow S/D extensions, followed by high energy implantation and activation, and metal silicidation to form S/D junctions having metal silicide connect regions and a fully metal silicided electrode.
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申请公布号 |
US6555453(B1) |
申请公布日期 |
2003.04.29 |
申请号 |
US20020058219 |
申请日期 |
2002.01.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;WOO CHRISTY MEI-CHU;KLUTH GEORGE J. |
分类号 |
H01L21/225;H01L21/28;H01L21/285;H01L21/336;H01L29/49;(IPC1-7):H01L21/28;H01L21/44 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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