| 摘要 |
A method for fabricating MOSFETs with a recessed self-aligned silicide contact and extended source/drain junctions is described. A gate structure having a gate insulating layer, a first conductive layer and a first dielectric layer is formed on a substrate. A thermal oxide layer is formed on the substrate and on sidewalls of the first conductive layer. The first dielectric layer is removed. Extended source and drain junctions are formed in the substrate under a region covered by the first thermal oxide layer. Sidewall spacers are formed on the sidewalls of the gate structure to protect the extended source and drain junctions therebeneath from being silicided. The second thermal oxide layer is removed to form recessed regions on a substrate surface. A first metal layer is formed on the substrate after the first dielectric layer is removed. Source/drain regions under the recessed regions are formed.
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