发明名称 |
Method for removing etching residues |
摘要 |
A method for removing fluorine-containing etching residues during dual damascene process comprises providing a dual damascene structure having a copper conductor structure therein, a cap layer formed on the copper conductor structure and the dual damascene structure, and a low dielectric constant dielectric layer on the cap layer. The low dielectric constant dielectric layer formed by spin-on polymer method has at least an opening above the copper conductor structure. The cap layer is etched by fluorine-containing plasma to expose the copper conductor structure. The dual damascene structure is cleaned with a solvent and then the fluorine-containing etching residues are removed by plasma sputtering treatment or baking, or by a combination of both. The addition of baking and plasma sputtering treatment can prevent poor adhesion between the subsequent metal diffusion barrier layer and the low dielectric constant dielectric layer.
|
申请公布号 |
US6554002(B2) |
申请公布日期 |
2003.04.29 |
申请号 |
US20010789349 |
申请日期 |
2001.02.21 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WU CHIH-NING;TSAI CHENG-YUAN;YANG CHAN-LON |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/302;B08B6/00 |
主分类号 |
H01L21/311 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|