| 摘要 |
Provided herein is a method of utilizing electroless copper deposition to form interconnects in a semiconductor device. An opening is formed in a dielectric layer in the form of a trench, via or combination thereof, and a diffusion barrier layer is blanket deposited in the opening. Then, a contact displacement technique is used to form a seed layer on the diffusion barrier layer which includes copper, tin and palladium. Electroless deposition of copper is been undertaken to autocatalytically deposit copper on the activated barrier layer. The process continues to create a conformal, void free electroless copper deposition.
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