| 摘要 |
PURPOSE: A method for manufacturing a flash memory cell is provided to be capable of increasing the select channel length of split-gate type memory cells. CONSTITUTION: A field oxide layer(20) is formed at a select channel region of a silicon substrate(11). A stacked gate electrode is formed by sequentially forming a tunnel oxide layer(14), a floating gate(15), a dielectric film(16) and a control gate(17) on the resultant structure. A source and drain region(12,13) are formed in the substrate. By selectively removing the field oxide layer, a groove with curvature is formed at the select channel region. An insulating layer(18) is formed on the resultant structure and a select gate(19) is formed on the insulating layer.
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