发明名称 |
Non-volatile memory device and method of manufacturing the same |
摘要 |
A non-volatile memory device includes gate insulating films formed on a semiconductor substrate and spaced apart from each other. A tunnel insulating film is formed on the semiconductor substrate and interposed between the adjacent gate insulating films. A memory transistor gate is formed on the tunnel insulating film and the gate insulating film interposing the tunnel insulating film therebetween. A select transistor gate is formed on the gate insulating film spaced apart from the memory transistor gate. A first doped region is formed in a portion of the semiconductor substrate under the memory transistor gate and extending to overlap one end of the select transistor gate. A second doped region is formed in a portion of the semiconductor substrate spaced apart from the first doped region and overlapping one end of the memory transistor opposite to the select transistor gate. A third doped region is formed in a portion of the semiconductor substrate spaced apart from the first doped region and overlapping the other end of the select transistor gate. The second doped region has a low-density doped region and a high-density doped region and is shallower in depth than the first and third doped regions.
|
申请公布号 |
US6555869(B2) |
申请公布日期 |
2003.04.29 |
申请号 |
US20020056478 |
申请日期 |
2002.01.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WEON-HO |
分类号 |
G11C16/04;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|