发明名称 |
Body contact silicon-on-insulator transistor and method |
摘要 |
A method for fabricating a body contact silicon-on-insulator transistor (10) includes forming a semiconductor substrate (12) over an insulator (14) and lightly doping the semiconductor substrate (12) to form a body region (18). The method also includes forming a gate (20) over the semiconductor substrate (12) and separated from the semiconductor substrate (12) by a gate insulator layer (21). The gate (20) defines a source region (22), a drain region (24) and a contact region (26). The method also includes masking a portion (36) of the gate (20) and the contact region (26) and heavily doping the source region (22), the drain region (24) and an unmasked portion (36) of the gate (20) with a material having a conductivity substantially opposite a conductivity of the body region (18).
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申请公布号 |
US6555446(B1) |
申请公布日期 |
2003.04.29 |
申请号 |
US20000692010 |
申请日期 |
2000.10.19 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
UNNIKRISHNAN SREENATH |
分类号 |
H01L21/336;H01L29/10;H01L29/423;H01L29/786;(IPC1-7):H01L21/46 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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