发明名称 Ion implanting apparatus
摘要 An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18. The control apparatus 22 performs, at least once respectively, {circle around (1 the current value control routine which calculates average values of all beam current measured by the beam current measuring instruments 18, and increases and decreases the respective filament current IF such that the average value comes near to the set value, and {circle around (2 the uniformity control routine which groups the beam current measuring instruments 17 into the number of the filaments, seeks for a maximum value and the minimum value from all the measured values of the beam current IB, decides groups to which the maximum value and the minimum value belong, decreases the filament current IF passing to the filaments 6 corresponding to the maximum value, and increases the filament current IF passing to the filaments 6 corresponding to the minimum value.
申请公布号 US6555831(B1) 申请公布日期 2003.04.29
申请号 US20000559728 申请日期 2000.04.28
申请人 NISSIN ELECTRIC CO., LTD. 发明人 KONISHI MASASHI;MAENO SHUICHI;ANDO YASUNORI
分类号 H01J37/304;H01J37/317;(IPC1-7):H01J37/00 主分类号 H01J37/304
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