发明名称 |
Fabricating an electrical metal fuse |
摘要 |
A method for forming an electrical metal fuse for use with a semiconductor integrated circuit device. At least two varying trench metal depths may be formed on a substrate to configure the electrical metal fuse thereon. Additionally, at least two different widths of single metal lines, may be configured on the substrate. As a result of the two different trench depths and two different widths of metal formed thereon to create the electrical metal fuse, increases in current density gradients and thermal gradients thereof can be generated. The trench metal depths and width of metal are formed from copper. The electrical metal fuse generally comprises a current density ratio greater than 10 to 1.
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申请公布号 |
US6555458(B1) |
申请公布日期 |
2003.04.29 |
申请号 |
US20020046802 |
申请日期 |
2002.01.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YU TA-LEE |
分类号 |
H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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