发明名称 |
Thin film transistor array substrate having laser illumination indicator |
摘要 |
A thin film transistor array substrate includes an insulating substrate, and gate lines formed on the substrate, storage electrode lines and storage electrodes are also formed on the substrate. Data lines cross over the gate lines and the storage electrode lines. The data lines are electrically insulated from the gate lines and the storage electrode lines. Thin film transistors are connected to the data lines and the gate lines, and pixel electrodes are connected to the thin film transistors. Bridges are formed at the same plane as the pixel electrodes while interconnecting the storage electrode lines and the storage electrodes placed at both sides of the gate lines. The storage electrode lines and the storage electrodes have protrusions or grooves placed close to the bridges to indicate the locations of laser illumination.
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申请公布号 |
US6555876(B2) |
申请公布日期 |
2003.04.29 |
申请号 |
US20020073459 |
申请日期 |
2002.02.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUN SAHNG-IK;SONG YU-RI;PARK WOON-YONG |
分类号 |
G09F9/30;G02F1/1362;G09F9/00;G09F9/35;H01L21/768;H01L23/544;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L31/039 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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