| 摘要 |
The specification describes thin film transistor (TFT) devices with source/drain contacts made by a metallo organic deposition (MOD) method wherein a metallo organic compound/metal particulate mixture is deposited to form a base pattern, and the base pattern is then plated with gold. The porous, relatively high resistance base pattern is thereby converted to a corrosion resistant, low resistance contact. The plating covers the sidewalls of the base pattern, thus allowing the final channel length to be less than the minimum design rule used for depositing the base pattern.
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