发明名称 |
PHOTODIODE WITH DIFFUSION LAYER OF DISPERSION-DISTRIBUTION PATTERN AND FABRICATION METHOD THEREOF AND SUBSTRATE AND ELECTRONIC MACHINE THEREBY |
摘要 |
PURPOSE: A photodiode with a diffusion layer of a dispersion-distribution pattern is provided to receive more light by making a light receiving area relatively broader as compared with a contact area. CONSTITUTION: A substrate(200) is prepared. A buried layer(10) is formed on the substrate. An epitaxial layer(20) is formed on the buried layer. A deep diffusion layer(30) is formed on the epitaxial layer through an ion implantation method. A shallow diffusion layer(40) of a discrete distribution bar type is formed on the epitaxial layer through an ion implantation method. An anode electrode(50) is formed on the deep diffusion layer.
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申请公布号 |
KR20030032129(A) |
申请公布日期 |
2003.04.26 |
申请号 |
KR20010062389 |
申请日期 |
2001.10.10 |
申请人 |
VITONET CO., LTD. |
发明人 |
JANG, JI GEUN;YOON, YEONG PYO |
分类号 |
H01L31/10;(IPC1-7):H01L31/10 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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