发明名称 PHOTODIODE WITH DIFFUSION LAYER OF DISPERSION-DISTRIBUTION PATTERN AND FABRICATION METHOD THEREOF AND SUBSTRATE AND ELECTRONIC MACHINE THEREBY
摘要 PURPOSE: A photodiode with a diffusion layer of a dispersion-distribution pattern is provided to receive more light by making a light receiving area relatively broader as compared with a contact area. CONSTITUTION: A substrate(200) is prepared. A buried layer(10) is formed on the substrate. An epitaxial layer(20) is formed on the buried layer. A deep diffusion layer(30) is formed on the epitaxial layer through an ion implantation method. A shallow diffusion layer(40) of a discrete distribution bar type is formed on the epitaxial layer through an ion implantation method. An anode electrode(50) is formed on the deep diffusion layer.
申请公布号 KR20030032129(A) 申请公布日期 2003.04.26
申请号 KR20010062389 申请日期 2001.10.10
申请人 VITONET CO., LTD. 发明人 JANG, JI GEUN;YOON, YEONG PYO
分类号 H01L31/10;(IPC1-7):H01L31/10 主分类号 H01L31/10
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