| 摘要 |
PURPOSE: Provided is a striper composition for photoresist, which is suitable for both stripping processes for dipping and single wafer treatments, and can easily remove a photoresist film modified during photoresist etching process, even at high and low temperatures in a short time. CONSTITUTION: The striper composition for photoresist comprises (a) 5-50 wt% of water-soluble, organic amine compound, (b) 20-70 wt% of protonic alkyleneglycol monoalkylether compound having boiling point of 150 deg.C or more, (c) at least one anti-corrosives selected from the group consisting of compounds represented by formulas 1, 2, 3, 4 and 5, and (d) 0.01-70 wt% of polar, non-protonic solvent. In the formula 1, R1 represents hydrogen or alkyl group having C1-C10, and n is an integer of 1-50. The water-soluble, organic amine compound(a) is primary amino alcohols, secondary amino alcohols, or tertiary amino alcohols compounds. |
