发明名称 SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A surface acoustic wave device and a manufacturing method thereof are provided to be capable of preventing the deterioration of characteristics due to the absorption of moisture and reducing fabrication cost. CONSTITUTION: A surface acoustic wave device is provided with a piezoelectric substrate(1a), an interdigital electrode part(1b) formed at the upper portion of the piezoelectric substrate, and a function film(4) partially formed at the upper portion of the interdigital electrode part. At this time, the function film is made of one selected from a group consisting of a nitride silicon layer, an oxide silicon layer, and an oxide nitride silicon layer for improving weather resistance. The surface acoustic wave device further includes a package(2) capable of exhausting moisture, installed at the resultant structure for storing the resultant structure. At the time, the function film is formed by carrying out an electron cyclotron resonance sputtering process.
申请公布号 KR20030032859(A) 申请公布日期 2003.04.26
申请号 KR20020063126 申请日期 2002.10.16
申请人 MURATA MANUFACTURING CO., LTD. 发明人 ARAKI NOBUSHIGE
分类号 H01L41/09;H01L41/18;H01L41/22;H01L41/23;H03H3/08;H03H9/02;H03H9/145;H03H9/25 主分类号 H01L41/09
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