FORMATION METHOD OF RESIST PATTERN

摘要

PURPOSE: A method for forming a resist pattern is provided, to improve the degree of integration of a semiconductor LSI. CONSTITUTION: The method comprises the steps of applying a resist composition on a substrate to from a resist film; prebaking the resist film; exposing the prebaked resist film to a pattern of radiation; post-exposure baking the exposed resist film; developing the resist film to form a resist pattern; and post baking the resist patter for causing thermal flow. The resist composition comprises a polymer or copolymer having a structural unit represented by the formula in a main chain and having partially an acid labile group in a side chain as a base resin; and a photoacid generator, wherein X1 and X2 are -O-, -S-, -NR-, -PR- or -CR2-; R is H or an alkyl group of C1-C20; and m is an integer of 0-3.