| 摘要 |
PURPOSE: A method and apparatus of chemical vapor deposition using diffusion suppressing gasses and devices are provided to improve deposition rate without increasing the quantity of source gas by using not only mutual diffusion-restraint effect between source and diffusion suppressing gas but a diffusion suppressing device. CONSTITUTION: When source gas used in CVD is supplied into a reaction chamber(3) filled up with diffusion suppressing gas, the diffusion boundary surface(B) is formed between source and diffusion suppressing gas. On this occasion, the density of source gas becomes much higher near susceptor(5) than the sidewall of the chamber. A diffusion suppressing device is installed in the chamber, enclosing the susceptor, to assist the diffusion boundary surface to remain stable. Source gas inlet(7) is installed in the apex of the diffusion suppressing device.
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