| 摘要 |
<p>The invention concerns in particular a method using a low pressure plasma for depositing a barrier coating on a substrate to be treated, wherein the plasma is obtained by partial ionisation, under the action of an electromagnetic field, of a reaction fluid injected under low pressure in a treating zone. The method is characterised in that it comprises at least a step which consists in depositing on the substrate an interface layer which is obtained by bringing to plasma state a mixture comprising at least an organosilicon compound and a nitrogenous compound, and a step which consists in depositing, on the interface layer, a barrier layer, essentially consisting of a silicon oxide of formula SiOx.</p> |
