发明名称 |
MEMORY DEVICE FOR APPLICATION IN HIGH-SPEED PIPELINE REED-SOLOMON DECODER, MEMORY ACCESS METHOD AND REED-SOLOMON DECODER COMPRISING THE MEMORY DEVICE |
摘要 |
PURPOSE: A memory device for application in a high-speed pipeline Reed-Solomon decoder, a memory access method and a Reed-Solomon decoder comprising the memory device are provided to increase the memory access speed in a high-speed block pipeline Reed-Solomon decoder to operate a memory device at a high speed. CONSTITUTION: A RAM(180) having six banks comprises a cyclic buffer controller(300) and a bank block(301). The bank block(301) comprises first to six banks (310-360). The cyclic buffer controller(301) outputs a read/write command(RD/WR) and a bank selection signal(BS) to the first to six banks(310-360). The bank signal(BS) for selecting one of the six banks(310-360) is composed of three bits. The bank selection signal(BS) is termed address. The read command(RD) is a signal commanding the reading of data stored in a selected bank, while the write command(WR) is a signal commanding the writing of data into the bank selected by the bank selection signal(BS).
|
申请公布号 |
KR20030032304(A) |
申请公布日期 |
2003.04.26 |
申请号 |
KR20010064015 |
申请日期 |
2001.10.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, IL MAN;KWON, HYEONG JUN |
分类号 |
G11C7/00;G06F11/10;G11C7/10;G11C8/12;H03M13/15;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|