| 摘要 |
PROBLEM TO BE SOLVED: To manufacture two types of shrunk MOS transistors having gate post-oxide films of different thicknesses by a Levenson method using a Trim mask and an Alt mask. SOLUTION: The semiconductor device comprises a first MOS transistor including a gate electrode 28 having a gate width Le, and a gate post-oxide film 30 provided on the circumferential side face of the gate electrode, and a second MOS transistor including a gate electrode 32 having a gate width Li smaller than the gate width Le of the gate electrode of the first MOS transistor, and a gate post-oxide film 33 provided on the circumferential side face of the gate electrode, at least a part of which is different in thickness from that of the gate post-oxide film 30. |
