| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor in which reliability is improved by protecting the side face of a semiconductor device of which the cross section in a wafer state becomes a side face. SOLUTION: In a semiconductor device 11, a resin layer 20 is extended to a wafer 2 while covering an insulating layer 5 and a protecting film 4 on the side face, after a cut groove 16 is formed at a dicing position for separation into individual semiconductor devices from the surface side to a position deeper than the protecting film 4 by a first dicing saw 14. The resin layer 20 is formed to fill the cut groove 16, and the resin layer 20 and the wafer 2 are cut at the position of the cut groove 16 by using a second dicing saw 15 having a blade width narrower than the width of the cut groove 16. |
