| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a high power conversion efficiency. SOLUTION: The semiconductor light emitting element comprises a light emitting layer 103 between an n-type semiconductor layer 102 and a p-type semiconductor layer 104, a p-type side electrode 1 provided on the surface of the p-type semiconductor layer, and an n-type side electrode 3 provided on the surface of the n-type semiconductor layer exposed partly by etching from the p-type semiconductor layer side. The p-type side electrode has a p-type side ohmic electrode ohmically connected to the p-type semiconductor layer, and a wire bonding p-type pad electrode 2 provided to be brought into contact with the part of the p-type ohmic electrode, the central part of the p-type side pad electrode is provided to be brought into contact with the insulating layer provided to be brought into contact with the p-type semiconductor layer, and at least the part of the outer periphery of the p-type side pad electrode is provided to be brought into contact with the p-type side ohmic electrode. |
