| 摘要 |
PROBLEM TO BE SOLVED: To provide a high luminance light emitting diode to improve a current dispersion effect by reducing the resistance of a part of a current dispersion layer by a method other than epitaxial growth. SOLUTION: A light emitting diode is structured such that epitaxial growth of a light emitting part is formed with an active layer 4 between first and second conductivity type clad layers 3 and 5 on a first conductivity type substrate 2, or further epitaxial growth of a second conductivity current dispersion layer 6 is effected thereon. A second conductivity dopant is injected in a dispersion state on the surface of the second conductivity clad layer 5 or the surface of a second conductivity current dispersion layer 6 at least by either one method of dispersion from a gas phase, dispersion from a liquid phase, or dispersion from a solid phase to form a high dopant concentration region 7 or 8. |
