| 摘要 |
PROBLEM TO BE SOLVED: To ensure a high withstand voltage in a semiconductor element having a parallel p-n layer wherein an n type region making a main current flow in a forward bias and being so depleted as to support a voltage in a reverse bias and a p type region are disposed alternately. SOLUTION: The parallel p-n layer is made to have a circular structure shaped like a concentric circle or the like, for instance, so as to eliminate the end face of each n region or p region. Thereby field concentration in the portion of the boundary between the parallel p-n layer and a peripheral structural part is avoided.
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