| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element wherein an active element region having a lattice constant larger than that of a single crystal nitride based semiconductor layer and good crystallinity is formed on the nitride based semiconductor layer, and a method for fabricating the same. SOLUTION: The semiconductor laser element 100 comprises a buffer layer 2, an undoped GaN layer 3, an n-GaN contact layer 4, an n-GaInN second clad layer 5, an n-GaInN first clad layer 6, a GaInN light emitting layer 7, a p-GaInN first clad layer 8, a multilayer p-second clad layer 9 of GaInN and GaN, and a cap layer 10 formed sequentially on a sapphire substrate 1. The n-GaInN second clad layer 5 comprises n-GaInN in non-single crystal state. Other layers 2-4 and 6-10 comprise a nitride based semiconductor in single crystal state.
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