发明名称 FAULT-TOLERANT SOLID STATE MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To avoid defective areas which are likely to be generated in fabrication of a memory. SOLUTION: A solid state memory device is fabricated by forming a level of the device (302), identifying defective areas in the level (304), and programming address logic of the level so as to avoid defective areas in the level (306).</p>
申请公布号 JP2003124441(A) 申请公布日期 2003.04.25
申请号 JP20020202557 申请日期 2002.07.11
申请人 HEWLETT PACKARD CO <HP> 发明人 HOGAN JOSH N
分类号 H01L27/10;G06F17/50;G11C29/00;G11C29/04;(IPC1-7):H01L27/10 主分类号 H01L27/10
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